Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers
Sobia Ali Khan,
Fayyaz Hussain,
Daewon Chung,
Mehr Khalid Rahmani,
Muhammd Ismail,
Chandreswar Mahata,
Yawar Abbas,
Haider Abbas,
Changhwan Choi,
Alexey N. Mikhaylov,
Sergey A. Shchanikov,
Byung-Do Yang,
Sungjun Kim
Affiliations
Sobia Ali Khan
A School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Korea
Fayyaz Hussain
Materials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University, Multan 60800, Pakistan
Daewon Chung
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea
Mehr Khalid Rahmani
A School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Korea
Muhammd Ismail
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea
Chandreswar Mahata
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea
Yawar Abbas
Department of Physics, Khalifa University, Abu Dhabi 127788, United Arab Emirates
Haider Abbas
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
Changhwan Choi
Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea
Alexey N. Mikhaylov
Research and Education Center “Physics of Solid State Nanostructures”, National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia
Sergey A. Shchanikov
Department of Information Technologies, Vladimir State University, 600000 Vladimir, Russia
Byung-Do Yang
A School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Korea
Sungjun Kim
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea
In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics.
