Critical Effect of Oxygen Pressure in Pulsed Laser Deposition for Room Temperature and High Performance Amorphous In-Ga-Zn-O Thin Film Transistors
Yue Zhou,
Dao Wang,
Yushan Li,
Lixin Jing,
Shuangjie Li,
Xiaodan Chen,
Beijing Zhang,
Wentao Shuai,
Ruiqiang Tao,
Xubing Lu,
Junming Liu
Affiliations
Yue Zhou
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
Dao Wang
College of Science, Qiongtai Normal University, Haikou 571127, China
Yushan Li
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
Lixin Jing
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
Shuangjie Li
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
Xiaodan Chen
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
Beijing Zhang
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
Wentao Shuai
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
Ruiqiang Tao
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
Xubing Lu
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
Junming Liu
Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210009, China
The aspects of low processing temperature and easy running in oxygen atmosphere contribute to the potential of pulsed laser deposition (PLD) in developing a-IGZO TFTs for flexible applications. However, the realization of low-temperature and high-performance devices with determined strategies requires further exploration. In this work, the effect of oxygen pressure and post-annealing processes and their mechanisms on the performance evolution of a-IGZO TFTs by PLD were systematically studied. A room-temperature a-IGZO TFT with no hysteresis and excellent performances, including a μ of 17.19 cm2/V·s, an Ion/Ioff of 1.7 × 106, and a SS of 403.23 mV/decade, was prepared at the oxygen pressure of 0.5 Pa. Moreover, an O2 annealing atmosphere was confirmed effective for high-quality a-IGZO films deposited at high oxygen pressure (10 Pa), which demonstrates the critical effect of oxygen vacancies, rather than weak bonds, on the device’s performance.
