Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substrates
Xin Liang,
Hua Zhou,
Hui-Qiong Wang,
Lihua Zhang,
Kim Kisslinger,
Junyong Kang
Affiliations
Xin Liang
Key Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Hua Zhou
School of Physics, Shandong University, Jinan 250100, People’s Republic of China
Hui-Qiong Wang
Key Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Lihua Zhang
Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA
Kim Kisslinger
Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA
Junyong Kang
Key Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of China
Fabricating Zn1−xMgxO films with a high Mg content is key to their applications in deep-ultraviolet optoelectronic devices. In this work, we report the preparation of Zn1−xMgxO films on (12̄10)-ZnO substrates by molecular beam epitaxy. The Zn1−xMgxO/(12̄10)-ZnO structure is revealed by x-ray diffraction and high-resolution transmission electron microscopy. Remarkably, no cubic MgO is observed for films with 74.6% Mg content; the film shows mainly the wurtzite structure with some intermediate phases at the interface. Photoluminescence spectra show that the film exhibits good optoelectronic properties with a bandgap of 4.6 eV. This work provides a new avenue for the fabrication of deep-ultraviolet Zn1−xMgxO films.
