An Optoelectronic Memristor Based on Proton‐Involved Photoreduction for Bimodal Sensing, Memory, and Processing

Abstract

Advanced devices and systems with integrated sensing, memory, and processing functionalities similar to those of the human nervous system are highly desirable for efficient artificial intelligence applications. In this study, an optoelectronic memristor with integrated bimodal sensing, memory, and processing based on graphite oxide (GO)/titanium dioxide (TiO2) nanocomposite is presented. The resistive switching behavior of the memristor is based on proton‐involved photoreduction, and the memristor exhibits humidity‐dependent optical resistive switching and synaptic behaviors similar to an artificial optoelectronic synapse. The plasticity of the artificial synapse can be further modulated by a heterosynapse with an external bias caused by electric field‐driven oxygen migration. These features equip the artificial synapse with not only a combined light/humidity information sensing and memory but also contrast enhancement and attention‐driven functionalities similar to those of the human visual memory system. Moreover, as a proof of concept, a sensory–motion system is constructed, which sends the synaptic feedback of the optoelectronic memristor to direct responses in a robotic arm. This work could provide a fundamental unit for the future development of perception systems in efficient humanoid robots.

Keywords

• bimodal sensing‐memory‐processing
• graphene oxide
• optoelectronic memristors
• photoreduction