Numerical simulation and performance analysis of amorphous zinc oxynitride thin film transistor (a-ZnON TFT) for large area display applications

Abstract

Recently, Amorphous zinc oxynitride (a-ZnON) has become a highly promising semiconductor material for applications requiring large-area electronic displays due to its excellent mobility, better stability under illumination stress etc. In this work, the basic bottom gate top contact (BGTC) a-ZnON TFT having a dielectric stack consisting of SiO2 and Si3N4 was simulated using SILVACO TCAD software. The results are validated with the output and transfer characteristics of experimental data available in the literature and the comparative study for four device structures, i.e., BGTC, BGBC, TGTC, and TGBC, respectively. Also, comparative studies of a-ZnON channel length variation and the Density of states (DOS) variation with respect to the device performance have been investigated. Our results and comparative studies show that a-ZnON-TFTs are suitable candidates for large area display applications.

Keywords

• Amorphous oxide semiconductor
• SILVACO TCAD
• Thin Film Transistors
• ZnON