Process Control Monitor (PCM) for Simultaneous Determination of the Piezoelectric Coefficients <i>d</i><sub>31</sub> and <i>d</i><sub>33</sub> of AlN and AlScN Thin Films
Hao Zhang,
Yang Wang,
Lihao Wang,
Yichen Liu,
Hao Chen,
Zhenyu Wu
Affiliations
Hao Zhang
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Yang Wang
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Lihao Wang
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Yichen Liu
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Hao Chen
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Zhenyu Wu
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Accurate and efficient measurements of the piezoelectric properties of AlN and AlScN films are very important for the design and simulation of micro-electro-mechanical system (MEMS) sensors and actuator devices. In this study, a process control monitor (PCM) structure compatible with the device manufacturing process is designed to achieve accurate determination of the piezoelectric coefficients of MEMS devices. Double-beam laser interferometry (DBLI) and laser Doppler vibrometry (LDV) measurements are applied and combined with finite element method (FEM) simulations, and values of the piezoelectric parameters d33 and d31 are simultaneously extracted. The accuracy of d31 is verified directly by using a cantilever structure, and the accuracy of d33 is verified by in situ synchrotron radiation X-ray diffraction; the comparisons confirm the viability of the results obtained by the novel combination of LDV, DBLI and FEM techniques in this study.
