Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering
Wei Zhong,
Sunbin Deng,
Kai Wang,
Guijun Li,
Guoyuan Li,
Rongsheng Chen,
Hoi-Sing Kwok
Affiliations
Wei Zhong
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Sunbin Deng
State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
Kai Wang
State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
Guijun Li
State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
Guoyuan Li
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Rongsheng Chen
School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Hoi-Sing Kwok
State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
In this article, we report continuous and large-area molybdenum disulfide (MoS2) growth on a SiO2/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS2 film was synthesized using a two-step method. In the first step, a thin MoS2 film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS2 film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS2 by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS2 are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS2 layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS2 on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.
